Исследование технологии изготовления мощных ИК (850 nm) светодиодов, получаемых методом переноса AlGaAs-GaAs-гетероструктуры на подложку-носитель
نویسندگان
چکیده
Development of lift-off technique AlGaAs/GaAs heterostructures, grown by the MOCVD technique, to GaAs carrier-substrate using silver-containing paste or Au-In compound has been carried out. Forming process frontal ohmic contact n-type conductivity based on systems Au(Ge)/Ni/Au and Pd/Ge/Au with specific resistivity 2-5·10-6 Ом·см2 investigated. Analyzed was influence heterostructure forming IR light-emitting diodes parameters: minimum (1mm2 square) series resistance 0.16 Ohm. Optical power 270 mW at current 1.5A achieved.
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ژورنال
عنوان ژورنال: ?????? ??????????? ??????
سال: 2023
ISSN: ['0044-4642', '1726-748X']
DOI: https://doi.org/10.21883/jtf.2023.01.54078.166-22